Fuji Electric 2MBI300N-060-04 IGBT Power Transistor Module 300A 600V Used

$24.95
Shipping: US $16.75 delivery in 2–4 days

Description

Fuji Electric 2MBI300N-060-04 IGBT Power Transistor Module 300A 600V Used For sale is a used Fuji Electric IGBT (Insulated Gate Bipolar Transistor) Power Module (Model: 2MBI300N-060-04). This high-power semiconductor module is engineered for high-speed switching applications, including industrial motor drives, AC/DC servo amplifiers, uninterruptible power supplies (UPS), and industrial welding machines. It features a dual IGBT topology designed for optimal thermal management and electrical isolation. Specifications: Brand: Fuji Electric Model / MPN: 2MBI300N-060-04 Lot Code / Batch: 2801 Module Type: Dual IGBT Power Transistor Module Collector Current (Ic): 300 Amps Collector-Emitter Voltage (Vces): 600 Volts Terminal Layout: Main screw terminals (C2E1, E2, C1) and auxiliary gate/emitter quick-connect pins (G1, E1, G2, E2) Country of Manufacture: Japan Condition Note: This item is in used condition, decommissioned from a working industrial system environment. The black composite housing and mounting flanges are physically solid with no cracks. The main threaded terminal lugs and auxiliary control pins are straight and clean. The metal heatsink base plate shows moderate cosmetic scuffs, scratches, and thermal paste residue from its previous installation as pictured. The module has not been bench tested or electrically verified by the seller. No original packaging, mounting screws, or documents are included. CONDITION: USPI - Used Surplus Previously Installed (OEM) WARRANTY: 90 DAYS SAME DAY SHIPPING AVAILABLE ON ORDERS MADE BEFORE 4PM EST. (CAN SHIP COLLECT ON UPS OR FEDEX ACCOUNT) SELL YOUR SURPLUS PremiumPLC BUYS ALL TYPES OF NEW AND USED INDUSTRIAL AUTOMATION & MRO SURPLUS _________________________________________________________________________________ 2148

Specifications

ManufacturerFuji
Model2MBI300N-060-04, 2MBI300N-060
ConditionUsed
TypeIGBT
Maximum Base-Emitter Saturation Voltage-2 V
Collector-Emitter Voltage600 V
Maximum Collector-Base Voltage600 V
ConfigurationInsulated
Maximum Base-Emitter Voltage300 V
Number of Elements per Chip1
Number of Pins1
Transistor CategoryPower Transistor
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